Publications

Publications from Anton’s postdoctoral work

Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides

T. Peña*, A. E. O. Persson*, A. Krayev, Á. Friðriksdóttir, K. Neilson, Z. Zhang, A. T. Hoang, J. A. Yang, L. Hoang, A. J. Mannix, P. C. McIntyre, and E. Pop

*Indicates equally contributing author

preprint

How to Identify Suitable Gate Dielectrics for Transistors based on Two-Dimensional Semiconductors

T. Knobloch, Q. Smets, A. E. O. Persson, P. Khakbaz, C. Wilhelmer, D. Lin, Z. Han, Y. Chung, K. P. O’Brien, C. Dorow, C. O’Coileáin, M. Lanza, D. Waldhoer, A. Karl, K. Liu, T. Zhai, H. Peng, C. Tan, X. R. Wang, G. S. Duesberg, J. Robertson, U. Avci, I. Radu, E. Pop, C. J. Lockhart de la Rosa, T. Grasser

preprint

High-current p-type transistors from precursor-engineered synthetic monolayer WSe₂

A. T. Hoang, K. Neilson, K. Xu, Y. Yang, S. M. Ribet, T. Peña, G. D'Acunto, Y. S. Song, A. E. O. Persson, W. Millsaps, C. Ophus, M. R. Rosenberger, E. Pop, A. J. Mannix

SpecPCM: A Low-Power PCM-Based In-Memory Computing Accelerator for Full-Stack Mass Spectrometry Analysis

K. Fan, A. Moradifirouzabadi, X. Wu, Z. Li, F. Ponzina, A. E. O. Persson, E. Pop, T. Rosing, M. Kang
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 10, 161-169 (2024)

Key to Low Supply Voltage: Transition Region of Oxide Semiconductor Transistors

K. Jana, J. Kang, S. Liu, F. F. Athena, C.-H. Huang, Y. Tang, H.J.-Y. Chen, B. Saini, J. Hartanto, R. K. A. Bennett, A. E. O. Persson, S. Li, K. Neilson, Y.-M. Lee, K. Leitherer, K. Nomura, P. C. McIntyre, E. Pop, H.-S. P. Wong
2025 Symposium on VLSI Technology and Circuits (2025)

First Comparative Thermal Evaluation of 2D Semiconductor vs. Silicon Nanosheet Transistors

Y. S. Song, H. Su, T. Peña, A. E. O. Persson, K. Yang, E. Yalon, R. K. A. Bennett, Z. Han, K. Neilson, J. Kang, J. A. Yang, H.-S. P. Wong, S. X. Wang, E. Pop
IEEE International Electron Devices Meeting (2025)

Publications from Anton’s PhD

Low-Frequency Noise in Ferroelectric III-V Vertical Gate-All-Around FETs

Z. Zhu, M. K. Ram, A. E. O. Persson, L.-E. Wernersson

IEEE Electron Device Letters 46, 741-744 (2025)

Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor

Z. Zhu, A. E. O. Persson, L.-E. Wernersson

ACS Nano 18, 28977-28985 (2024)

RF Characterization of Ferroelectric MOS Capacitors

A. E. O. Persson, S. Andrić, L. Fhager, L.-E. Wernersson

IEEE Electron Device Letters 45, 1653-1656 (2024)

A Reconfigurable Ferroelectric Transistor as An Ultra‐Scaled Cell for Low‐Power In‐Memory Data Processing

Z. Zhu, A. E. O. Persson, L.-E. Wernersson

Advanced Electronic Materials 11, 2400335 (2024)

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Z. Zhu, A. E. O. Persson, L.-E. Wernersson

Nature Communications 14, 2530 (2023)

Sensing single domains and individual defects in scaled ferroelectrics

Z. Zhu, A. E. O. Persson, L.-E. Wernersson

Science Advances 9, eade7098 (2023)

Integration of ferroelectric Hf_xZr_1-xO₂ on Vertical III-V Nanowire Gate-all-around FETs on Silicon

A. E. O. Persson, Z. Zhu, R. Athle, L.-E. Wernersson

IEEE Electron Device Letters 43, 854-857 (2022)

Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf_1–_xZr_xO₂

R. Athle, A. E. O. Persson, A. Troian, M. Borg

ACS Applied Electronic Materials 4, 1002-1009 (2022)

As-deposited ferroelectric HZO on a III–V semiconductor

A. Andersen, A. E. O. Persson, L.-E. Wernersson

Applied Physics Letters 121 (2022)

Ferroelectric-Antiferroelectric Transition of Hf_1–_xZr_xO₂ on Indium Arsenide with Enhanced Ferroelectric Characteristics for Hf_0.2Zr_0.8O₂

H. Dahlberg, A. E. O. Persson, R. Athle, L.-E. Wernersson

ACS Applied Electronic Materials 4, 6357-6363 (2022)

Improved Endurance of Ferroelectric Hf_xZr_1–xO₂ Integrated on InAs Using Millisecond Annealing

R. Athle, T. Blom, A. Irish, A. E. O. Persson, L.-E. Wernersson, R. Timm, M. Borg

Advanced Materials Interfaces 9, 2201038 (2022)

Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf_1–_xZr_xO₂

R. Athle, A. E. O. Persson, A. Irish, H. Menon, R. Timm, M. Borg

ACS Applied Materials & Interfaces 13, 11089-11095 (2021)

A method for estimating defects in ferroelectric thin film MOSCAPs

A. E. O. Persson, R. Athle, J. Svensson, M. Borg, L.-E. Wernersson

Applied Physics Letters 117 (2020)

Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization

A. E. O. Persson, R. Athle, J. Svensson, M. Borg, L.-E. Wernersson

Applied Physics Letters 116 (2020)